A 2.4G-Hz CMOS Power Amplifier

摘要：

A 2.4G-Hz high linear power amplifier (PA) with a parallel class A&B structure is presented. The selfbiased cascode transistors are used to improve the reliability. The PA was fabricated in a 0.13-μm CMOS process. Measurement results show the power gain is 9.6dB and the output power at the ldB compression point is larger than 10.6dBm under a single supply voltage of +3.3V. The measured IMD3 is -40dBc at around 0.3dBm output power (one-tone each) in two-tone test.

作者: Jian Fu Shilei Hao Yumei Huang Zhiliang Hong

作者单位: State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 201203, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 659-661

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）