The accelerated TID degradation induced by neutron irradiation on CMOS microprocessor

摘要：

This paper presents an experimental study of total ionizing dose (TID) characterization of a CMOS microprocessor, which has been pre-exposed to different level of neutron fluence. The power supply current and output voltage of the IO port and pulse width modulation (PWM) are found to be sensitive in ionizing radiation test. Experimental results show that neutron irradiation affects subsequent TID behavior. The mechanism of this synergistic effect is discussed based on the degradation of basic transistor and schematic circuit diagram of IO port. The underlying neutron enhanced TID sensitivity may become significant under concurrent radiation environment.

作者: Xiao-Ming Jin Ru-Yu Fan Wei Chen Yan Liu Dong-Sheng Lin Shan-Chao Yang

作者单位: Department of Engineering Physics, Tsinghua University, Beijing 100084, China Northwest Institute of Department of Engineering Physics, Tsinghua University, Beijing 100084, China Northwest Institute of Northwest Institute of Nuclear Technology, Xian 710024, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 662-664

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）