A dual-band SiGe HBT low noise amplifier
To adapt to the rapid development of multi-standard mobile communication, a low noise amplifier (LNA) that can operate at two frequencies of 800MHz and 1.8GHz respectively was designed. SiGe HBTs with good noise performance were used in the design. The Cascode circuit topology was adopted to reduce the Miller effect of the transistor. Inductor degeneration in emitter was introduced to decouple the input impedance from the noise factor. The input matching is achieved through serial and parallel LC circuit which can resonate at two frequencies simultaneously. The output matching circuit was realized by adjusting the load impedance to 50Ω. The simulated results show that the transmission gain S21 reached 24.3dB and 21.3dB at 800MHz and 1.8GHz respectively. Both S11 reached -13dB simultaneously, Both S22are lower than -27dB. The noise figures are 3.3dB and 2.0dB at these two frequencies respectively. Finally the layout of the monolithic integrated dualband LNA is presented.
Hong-yun Xie Zhi-yi Lu Wan-rong Zhang Pei Shen Chun-bao Ding Yun-xia You Bo-tao Sun
Colledge of Electronic Information and Control Engineering, Beijing University of Technology, Beijin Colledge of Electronic Information and Control Engineering,Beijing University of Technology, Beijing
国际会议
上海
英文
668-670
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）