Design of Third order Butterworth bandpass filter with Active inductor by using RFCMOS and HEMT Technology
In this paper active inductor circuits are employed to assess their suitability for providing a tuning function in 0.18-μm 1.8-V standard RFCMOS and ED02AH HEMT technology, MMIC circuits. The specifications for a mobile handset bandpass filter operating from a 3V supply rail are used as test vehicles. The design and simulation of the circuits employs a low-cost commercially available low pinch-off RFCMOS and HEMT process. The suitability of active inductors for tuning in such applications considers issues such as frequency tuning range, noise, power consumption and stability.in this paper we compare S21, impedance matching and Gain ripple in filter active RFCMOS technology with HEMT technology in the same state. We used Advanced Design Circuit (ADS) Software for all Design and Simulation.
Active inductors MMIC RFCMOS, HEMT
Yadolah Mehrzad Gilmalek Mehdi Rahnama Alishir Moradi Kordalivaiu
Young researcher club of arak Islamic Azad University Islamic Azad University Roudsar-Amlash Branch, Faculty of engineering Department Arak Islamic Azad University Arak Islamic Azad university, Arak, I
国际会议
上海
英文
702-706
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）