Dual SCR With Low-and-Constant Parasitic Capacitance for ESD Protection in 5-GHz RF Integrated Circuits

摘要：

Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fullysilicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at -135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.

关键词： Electrostatic discharges (ESD) radio- frequency integrated circuit (RF IC) silicon-controlled rectifier (SCR).

作者: Chun-Yu Lin Ming-Dou Ker

作者单位: Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan Department of Electronic E

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 707-709

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）