A Dual Mode GaAs HBT Power Amplifier for LTE Applications
In this paper, a dual mode GaAs HBT power amplifier for LTE band I applications is present. The amplifier is designed to operate from 1.92GHz to 1.98GHz with 28 dB of gain, enough to work with transmitter chips with relative low output power. The amplifier deliveries 28dBm of linear power at 3.4V supply to satisfy the linearity requirement for the LTE application. To improve the average efficiency of the amplifier, a new structure of dual mode is proposed. At the high power mode, the efficiency of the amplifier is 34％ at 28dBm of CW output power, and at the low power mode, the efficiency of that is 22％ at 15dBm output power.
LTE Dual Mode GaAs HBT 3GPP Bias Circuit Linear Power Amplifiers
Jiwei Huang Yinghao Liao Zhijian Chen
Institute of RF-&OE IC, Southeast University, Nanjing 210096, China Guangzhou Run-inslnformation Tec Guangzhou Run-inslnformation Technology Company, Guangzhou 510663, China
国际会议
上海
英文
722-724
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）