A Single-in-differential-out CMOS RF Front-end for UWB 6-9GHz Applications

摘要：

An integrated ultra-wideband CMOS RF front-end for UWB 6-9 GHz application is presented in this paper. A single-in-differential-out gain controllable low noise amplifier and a current-reuse bleeding IQ merged quadrature mixer are integrated as the RF front-end. This ESD protected module is implemented in TSMC 0.13μm RF CMOS process and the post-layout simulation results shows that it achieves a high voltage gain of 23.7-25.1dB and a low voltage gain of 10-12.4dB, an averaged total noise figure of 4.6-5.1dB while operating in the high gain mode and an in-band IIP3 of -6.7dBm while the low gain mode. This RF frontend consumes 22.4mA from a 1.2V supply voltage.

关键词： CMOS Ultra-wideband (UWB) single-in-differential-out low noise amplifier (LNA) current-reuse bleeding quadrature mixer

作者: Feng Zhou Wei Li Ting Gao Fei Lan Ning Li Junyan Ren

作者单位: State Key Lab. of ASIC & System, Fudan University, Shanghai, 201203, China State Key Lab. of ASIC & System, Fudan University, Shanghai,201203, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 743-745

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）