High-mobility Defect-free Ge Single-crystals by Rapid Melting Growth on Insulating Substrates

摘要：

Single-crystal Ge films on insulating substrates are desired to achieve advanced 3-dimensional large-scale integrated circuits (3D-LSIs) and thin-film transistors (TFTs). We have developed the rapidmelting Ge growth seeded from Si substrates, which achieves giant Ge on insulator (GOI) structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth is clarified as the solidification temperature gradient originating from melting induced Si-Ge mixing. Combination with the artificial Si micro-seed technique and the rapid melting growth enables the single-crystal defect-free Ge on transparent insulating substrates. High hole mobility exceeding 1000 cm2/Vs is also demonstrated.

作者: Masanobu Miyao Kaoru Toko Masashi Kurosawa Takanori Tanaka Takashi Sakane Yasuharu Ohta Naoyuki Kawabata Hiroyuki Yokoyama Taizoh Sadoh

作者单位: Department of Electronics, Kyushu University, Fukuoka, 819-0395, Japan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 827-830

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）