Direct Fabrication of Poly-SiGe Thin Films on Amorphous Substrates and Its Application to Bottom-gate TFTs

摘要：

We have developed a new thermal CVD technique for poly-SiGe thin films that meets the requirements for low-cost fabrication of post-amorphous silicon (aSi:H) TFTs, i.e., Reactive Thermal CVD featuring a set of reactive source materials of disilane (Si2H6) and germanium tetrafluoride (GeF4). We succeeded in deposition of poly-SiGe thin films at 450°C or higher on glass substrates by this technique. And we succeeded in depositing uniform films in a thickness variation less than 5％ for the entire area of 6-inch substrate. Thanks to high crystallinity of the present films at the initial stage of the film growth on the substrates, the films exhibited such high crystallinity that we could fabricate bottom-gate TFTs with very thin poly-SiGe films of 30nm deposited directly on SiO2/Si substrates, which showed high mobility of 8 cm2/Vs.

作者: Jun-ichi Hanna Cheol-hyun Lim Takuya Hoshino

作者单位: D Imaging Science and Engineering Laboratory, Tokyo Institute of Technology Jl-2,4259 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 840-843

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）