Edge Field Enhanced Deep Depletion Phenomenon in MOS Structures with Ultra-thin Gate Oxides

摘要：

The edge field enhanced deep depletion phenomenon in metal-oxide-semiconductor (MOS) structure was demonstrated. The analysis in inversion to deep depletion of ultra-thin SiQ2 and HfO2 was conducted using critical field model. By examine the field ratio between edge and bulk, it is observed that the HfO2 has larger ratio than SiO2. It is supposed the edge field enhanced deep depletion phenomenon dominates both capacitance-voltage and currentvoltage behavior.

作者: Jen-Yuan Cheng Hui-Ting Lu Che-Yu Yang Jenn-Gwo Hwu

作者单位: Graduate Institute of Electronics Engineering / Department of Electrical Engineering National Taiwan University, Taipei, Taiwan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 844-846

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）