Performance Variations of Ballistic and Quasi-Ballistic MOSFETs: Analytical Variation Model for Virtual Source Potential and kT-Layer Length

摘要：

We have studied analytical model for performance variations of an extremely thin SOI-FET (ETSOI-FET) with an intrinsic Si (/-Si) channel in ballistic and quasi-ballistic regions, becuase ETSOIs are candidate for suppressing the performace variations as well as Coulomb scattering of carriers in the channel. It is newly found that drain current in ballistic ETSOIs still fluctuates even in an i-Si channel, which is due to dopant fluctuation in source/drain (S/D) extensions.

作者: T. Mizuno A. Toriumi

作者单位: Kanagawa Univ., 2946, Tsuchiya, Hiratsuka 259-1293, Japan Univ. Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 847-850

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）