Physics of Metal Suicides: Stability, Stoichiometry, and Schottky Barrier Control

摘要：

Using theoretical calculations, we explain why some metal atoms like Ni produce bulk silicides and the others such as Au never produce silicides, why silicides with some stoichiometry are difficult to grow on Si substrate, why Schottky barrier for electrons simply decreases as the Si ratio in silicides increases, and how the dopants change Schottky barrier. It is shown that the keys to answer these questions are (i) the electron transfer from Si-p to metal-atom-d orbitals and (ii) the energy losses by elastic strain and bond-breaking at the interface.

作者: Takashi Nakayama Yoshiaki Machida Shinichi Sotome

作者单位: Department of Physics, Chiba University, 1-33 Yayoi, Inage, Chiba 263-8522, Japan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 851-854

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）