A Compact Modeling of Si Nanowire MOSFETs

摘要：

Compact modeling of a Si nanowire MOSFET is discussed. Framework and detailed expression of the compact model for a ballistic Si nanowire MOSFET are provided. The device characteristics of a thin Si nanowire MOSFET is shown as a model calculation, and some characteristic features of the device are explained. Then a new scattering model for a quasi- ballistic Si nanowire MOSFET is introduced, and the basic concept of the model is explained. The elastic backscattering and the energy relaxation are separately considered. The result of model calculation of a quasi-ballistic Si nanowire MOSFET is shown.

作者: Kenji Natori

作者单位: Frontier Research Center, Tokyo Institute of Technology, J2-68 4259 Nagatsuta, Modori-ku, Yokohama 226-8502, Japan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 855-858

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）