Advanced Lateral Power MOSFETs for Power Integrated Circuits

摘要：

CMOS compatible power devices have been an intensely pursued area in the past few decades. Power integrated circuit technologies are now accessible by many designers via popular foundry services. This paper is a brief review on modern integrated power transistors including the recently introduced CMOS compatible Orthogonal Gate extended drain MOSFETs (OG-EDMOS) and the lateral superjunction power FINFETs with embedded 3D trench gate. The characteristics of these devices are discussed and a perspective on the future trend of integrated power transistors is presented.

作者: Wai Tung Ng Abraham Yoo

作者单位: The Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 1 Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto,

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 859-862

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）