会议专题

Tensile-Strained Ge and Ge1-xSnx Layers for High-Mobility Channels in Future CMOS Devices

We have investigated the growth and crystalline properties of tensile-strained Ge and Ge1-xSnx heteroepitaxial layers for high-mobility channels. The low temperature growth and the large misfit strain between Ge1-xSnx and Si leads to the high density of defects such as vacancy in Ge1-xSnx layers. They effectively enhance the propagation of misfit dislocations and the strain relaxation with suppressing the precipitation of Sn atoms from Ge1xSnx layers. As a result, we succeeded in growing strain-relaxed Ge1_xSnx layers with a Sn content over 9% by controlling the dislocation structures. We also characterized the Hall mobility of Ge1-xSnx layers and found that the Sn incorporation into Ge effectively reduced the concentration of holes related to vacancy defects, and improved on the hole mobility.

Shigeaki Zaima Osamu Nakatsuka Yosuke Shimura Shotaro Takeuchi

Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University Furo- Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University Furo-

国际会议

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

上海

英文

871-874

2010-11-01(万方平台首次上网日期,不代表论文的发表时间)