MOSFETs with High Mobility Channel Materials and Higher-k/Metal Gate Stack

摘要：

Integration of lanthanum lutetium oxide (LaLuO3) with a k value of 30 is demonstrated on high mobility biaxially tensile strained Si (sSi) and compressively strained SiGe for fully depleted n/p-MOSFETs as a gate dielectric. N-MOSFETs on sSi fabricated with a full replacement gate process indicated very good electrical performance with steep subthreshold slopes of～72 mV/dec and Ion/I<off ratios up to 109. Strained SOI (sSOI) channel devices show higher electron mobility of 385 cm2/Vs compared to the reference device on SOI which has a mobility of 188 cm2/Vs. P-MOSFETs fabricated on sSi/SiosGeos/sSOI heterostructure with a gate first process showed a subthreshold swing of 92 mV/dec and an Ion/I0fr ratio of 105. The extracted hole mobilities are similar to the reference device with HfO2 as gate dielectric, and are much higher than the hole mobilities in Si.

作者: W. Yu K.K. Bourdelle J.Schubert O. T. Zhao S. Mantl E. Durgun Oezben B. Zhang A. Nichau J.M.J. Lopes R. Luptak St. Lenk J.M. Hartmann D. Buca

作者单位: Institute of Bio- and Nanosystems (IBN1-IT), Forschungszentrum Julich and JARA-FIT, 52425 Jiilich, G SOITEC, Parc Technologique des Fontaines, 38190, Bernin, France Institute of Bio- and Nanosystems (IBN1-IT),Forschungszentrum Julich and JARA-FIT, 52425 Jiilich,Ger Institute of Bio- and Nanosystems (IBN1-IT), Forschungszentrum Julich and JARA-FIT, 52425 Jiilich, G CEA-LETI, MINATEC, 17 rue des Martyrs, 38054 Grenoble, France

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 875-878

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）