Influence of carrier transport on drain-current variability of MOSFETs

摘要：

We have investigated static variability of p-MOSFETs by evaluating the drain current under various conditions of gate and drain voltages. The value of drain current variability (σ1d/Id) is proportional to (LW) 1/2 before the short channel effect appears, being similar to that of Vt variability. The magnitude of σId/Id decreases as the gate overdrive (Vg-Vt) decreases and classified into two regimes that corresponds to the carrier conduction mechanisms, i.e., diffusion and drift transports. This result strongly suggests that the dominant factors for determining σd/Id values are related to the carrier conduction mechanisms.

作者: Kenji Ohmori Kenji Shiraishi Keisaku Yamada

作者单位: Nanotechnology Laboratory, Waseda Univ., Tokyo 162-0041 Japan JST-CREST JST-CREST University of Tsukuba

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 879-882

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）