Carrier Transport in (110) n-and p-MOSFETs

摘要：

(110) surface orientation have attracted great interests, since pFETs on (110) substrates show much superior mobility to (100) pFETs 1,2. In addition, (110) surface orientation is widely utilized in advanced FET structures such as FinFETs 3 and Tri-gate FETs 4. A few reports have been made on carrier transports in (110) nFETs 5,6, its physical mechanisms have not been fully investigated nor understood yet.

作者: Ken Uchida Tsunaki Takahashi

作者单位: Department of Physical Electronics, Tokyo Institute of Technology 2-12-1-S9-12, Ookayama, Meguro-ku, Tokyo 152-8552, Japan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 887-890

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）