Low-frequency noise in strained and relaxed Ge pMOSFETs
The low-frequency (LF) noise behaviour of pMOSFETs fabricated in strained Ge (sGe) and reference thick Ge-on-Si epitaxial layers has been compared. As is shown, the LF noise in the subthreshold regime is higher for the reference devices compared with the sGe, while in strong inversion, similar noise levels are achieved. The better noise performance in weak inversion is related to the lower density of threading dislocations in the sGe layers, leading to a lower drain-to-bulk leakage current. It is also demonstrated that in the low drain current regime, the noise spectrum is Lorentzian and independent on the gate bias, emphasizing the role of substrate defects in generating the LF noise fluctuations.
E. Simoen C. Claeys J. Mitard B. De Jaeger G Eneman A. Dobbie M. Myronov D.R. Leadley M. Meuris T. Hoffmann
Imec, Kapeldreef 75, B-3001 Leuven, Belgium Department of Physics, The University of Warwick, CV4 7ALUK Department of Physics, The University of Warwick, CV4 7ALUK also at E.E. Depart KU Leuven, Kasteelpa
国际会议
上海
英文
891-893
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）