Direct Observation of Channel Hot-Electron Energy in Short-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

摘要：

An experimental method is proposed to extract the channel hot-electron (CHE) energy (φe) in the nano-meter -scaled metal-oxide-semiconductor field-effect transistors (MOSFETs). Accelerated by localized electric field in the drain induced channel depletion region, the CHEs obtain larger kinetic energy than the other unaccelerated channel electrons, and they gain greater probability of tunneling through the gate oxide so as to enlarge the gate leakage current. By monitoring the CHE enhanced gate leakage transients and solving the one-dimensional Schrodinger equation, the reduced gate barrier height (φa) and the φe can be extracted. This method is applicable to the shortchannel MOSFETs with a channel length less than 150nm with promising accuracy, and it is advantageous owing to its simplicity and timely-applicability to the very recent ultra-small-feature-sized MOSFETs.

作者: Gang Zhang Cheng Yang Hua-Min Li Tian-zi Shen Won Jong Yoo

作者单位: Sungkyunkwan University, SKJCU Advanced Institute of Nano-Technology, 300 Cheoncheon-dong, Jangan-gu, Suwon, 440-746, Korea

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 894-896

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）