Direct Observation of Channel Hot-Electron Energy in Short-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
An experimental method is proposed to extract the channel hot-electron (CHE) energy (φe) in the nano-meter -scaled metal-oxide-semiconductor field-effect transistors (MOSFETs). Accelerated by localized electric field in the drain induced channel depletion region, the CHEs obtain larger kinetic energy than the other unaccelerated channel electrons, and they gain greater probability of tunneling through the gate oxide so as to enlarge the gate leakage current. By monitoring the CHE enhanced gate leakage transients and solving the one-dimensional Schrodinger equation, the reduced gate barrier height (φa) and the φe can be extracted. This method is applicable to the shortchannel MOSFETs with a channel length less than 150nm with promising accuracy, and it is advantageous owing to its simplicity and timely-applicability to the very recent ultra-small-feature-sized MOSFETs.
Gang Zhang Cheng Yang Hua-Min Li Tian-zi Shen Won Jong Yoo
Sungkyunkwan University, SKJCU Advanced Institute of Nano-Technology, 300 Cheoncheon-dong, Jangan-gu, Suwon, 440-746, Korea
国际会议
上海
英文
894-896
2010-11-01(万方平台首次上网日期,不代表论文的发表时间)