700 V Segmented Anode LIGBT with Low On-Resistance and Onset Voltage

摘要：

IGBT (Insulated Gate Bipolar Transistor) especially in high voltage and power applications is popular with device designers because it possesses the merits of high-input impedance of MOSFET and high current handling capability of bipolar transistor. It reduces the chip area and difficulty of controlling circuit, thus the system cost can be reduced drastically. LIGBT (Lateral IGBT) for its conveniences of surface connection and package is usually used in power integrated circuits.

作者: Shuangliang Duan Ming Qiao Kun Mao Bo Zhong Lingli Jiang Bo Zhang

作者单位: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 897-899

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）