Thermal and Electrical Characteristics of HfLaON with Different Nitridation Annealings

摘要：

High dielectric constant (high-k) oxides have been widely investigated as gate dielectric to replace silicon oxide for continual scaling down of the dimensions of MOSFETs. Among various high-k dielectrics, HfLaON has been identified as a promising candidate for the gate dielectric, due to its high k value (k～20), excellent thermal stability with high crystallization temperature, and low gate leakage 1-4. Wu et al.

作者: Xiao-Dong Huang P.T. Lai

作者单位: Department of Electrical and Electronic Engineering, the University of Hong Kong, Hong Kong

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 900-902

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）