GeSi/Si nanostructure formation by Ge ion implantation in (100) silicon wafer

摘要：

In this work, two kinds of thermal annealing methods were used to process the silicon wafer by Ge ion bombardment in two steps, dose of 7×10l 6/cm2 with 150KeV and dose of 2.72×1016/cm2 with 50KeV respectively. In order to control the defects density and Ge distribution in SiGe layer, furnace annealing (FA) and rapid thermal annealing (RTA) schedules were used. It has been found that the FA after ion implantation could produce a high density of SiGe nanoclusters more than RTA. The results show that the SiGe nanostructure is matched with the Si matrix. SiGe nanostructure;Ion implantation;annealing.

作者: Wenting Xu Hailing Tu Qing Chang Qinghua Xiao

作者单位: General Research Institute for Non-ferrous Metals, Beijing, 100088, China GRINM Semiconductor Materials Co.Ltd., Beijing, 100088, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 903-904

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）