Hole-Mobility Enhancement in Ultrathin Strained Sio.5Ge0.5-on-Insulator Fabricated by Ge Condensation Technique

摘要：

Ultrathin (11 nm) strained SiGe-on-insulator (SGOI) with a Ge fraction of 0.5 was fabricated by Ge condensation technique. The residual compressive strain as high as 1.72％ was achieved in SGOI layer by reducing the initial thickness of as-grown Sio.93Geo.07 layer. Strained-SGOI pMOSFET exhibits a hole mobility of 3 times higher than that of Si-oninsulator pMOSFET.

作者: Haigui Yang Dong Wang Hiroshi Nakashima

作者单位: Art, Science and Technology Center for Cooperative Research, Kyushu University 6-1 Kasuga-koen, Kasu Art,Science and Technology Center for Cooperative Research, Kyushu University 6-1 Kasuga-koen, Kasug

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 905-907

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）