High Mobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2/TiN Gate Stack

摘要：

P-MOSFETs with HfO2 gate dielectric and TiN metal gate were fabricated on compressively strained SiGe layers with a Ge content of 50 at.％ and electrically characterized. The devices showed good output and transfer characteristics. The hole mobility, extracted by a split C-V technique, presents a value of～200 cm2/V-s in the strong inversion regime.

作者: B. Zhang W.Yu Q.T. Zhao J.-M. Hartmann R. Luptak D. Buca K. Bourdelle X.Wang S. Mantl

作者单位: Institute of Bio- and Nanosystems (IBN-1), Forschungszentrum Juelich and JARA- Fundamentals of Futur Institute of Bio- and Nanosystems (IBN-1), Forschungszentrum Juelich and JARA- Fundamentals of Futur CEA-LETI, MINATEC, 17 rue des Martyrs, 38054 Grenoble, France SOITEC, Pare Technologique des Fontaines, 38190, Bernin, France State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 911-913

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）