RF Characteristics of A High Voltage LDMOSFET
Stack-transistor structure is often used in RF applications for higher power handling capability and/or isolation. LDMOSFET may provide similar advantages with smaller device area and lower series resistance. The purpose of this work is extracting the RF parameters of a LDMOSFET and design a RF switching circuit with these parameters. The design trade-off between LDMOS and CMOS technologies was discussed in this paper. The simulated results of this LDMOS RF switch exhibit excellent agreement to the measured data over the frequency range from DC to 3GHz. Based on this small signal LDMOSFET model, advantageous RF IC applications with LDMOS technology could be realized.
RF LDMOS RF switch parameter extraction
C. M. Hu C. Y. Hung J. Gong
Institute, of Electronics Engineering, National Tsing Hua University, HsinChu, Taiwan Department, of Electricals Engineering, Tung Hai University, TaiChung, Taiwan
国际会议
上海
英文
920-922
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）