Dual gate controlled single electron effect in silicon nanowire transistors

摘要：

Silicon nanowire transistor with side-gate and backgate has been fabricated by electron beam lithography combined with dry oxidation on a doped silicon-oninsulator wafer. The effects of back-gate and sidegate on the properties of single electron transport were investigated by measuring the channel current as function of the applied gate voltages. The tunable single electron effect and Coulomb oscillations were observed experimentally at temperature below 80 K. The behaviors of single electron in Si nanowire transistors are discussed.

作者: Xian-Gao Zhang Kun-Ji Chen Zhong-Hui Fang Jun Xu Xin-Fan Huang

作者单位: State Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 923-925

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）