MOSFETs on Self-Assembled SiGe Dots with Strain-Enhanced Mobility

摘要：

Silicon-germanium dots grown in the StranskiKrastanow mode are investigated as sources of strain for electron mobility enhancement in the silicon capping layer. N-channel MOSFETs with the channel in the Si cap-layer over the SiGe dot (DotFETs) are fabricated in a custom-made process and have an average increase in drain current of up to 22.5％ compared to the reference devices. The sources of device variations related to the dimensions of the main gate-segment are identified and their influence on device performance evaluated, confirming the mobility enhancement.

作者: V. Jovanovic G. Bauer O.G Schmidt L. Miglio C. Biasotto L.K. Nanver J. Moers D. Griitzmacher J. Gerharz G Mussler J.van der Cingel J. Zhang

作者单位: DIMES, Delft University of Technology, Feldmannweg 17,2628 CT Delft, The Netherlands Johannes Kepler University Linz, Altenberger Strasse 69, A-4040 Linz, Austria Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20,01069 Dresden, Germany University of Milano-Bicocca, Piazza dellAteneo Nuovo 1,20126 Milano, Italy Forschungszentrum Julich, Wilhelm Johnen Strasse, 52428 Juelich, Germany

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 926-928

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）