Characterization of Self-Aligned Metal Electrodes Poly-Si TFTs with Schottky Barrier Contact

摘要：

A new type of polycrystalline silicon (poly-Si) thinfilm transistors (TFTs) with self-aligned metal electrodes (SAME) is systematically characterized. New device features different from conventional polySi TFTs are found, and are attributed to the presence of Schottky barriers at the channel ends.

作者: Jie Chen Mingxiang Wang Ping Lv Man Wong

作者单位: Dept. of Microelectronics, Soochow University, Suzhou 215006, China Dept. of Electronic and Computer Engineering, the Hong Kong Univ. of Science and Technology, Hong Ko

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 929-931

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）