Performance improvement of nc-Si nonvolatile memory by novel design of tunnel and control layer

摘要：

The nc-Si nonvolatile memory devices with high performance have been fabricated by using general CMOS techniques. High resolution transmission electronic microscope (HRTEM) shows that the average size of nc-Si is 8 nm and its density is 3X10/cm2. The performance of programming/erasing and retention time is mainly depending on the quality and thickness of tunnel layer and control layer. The results show the relation between the performance and novel design of tunnel and control layers.

作者: Xin-Ye Qian Kun-Ji Chen Zhong-Yuan Ma Xian-Gao Zhang Zhong-Hui Fang Guang-Yuan Liu Xiao-Fan Jiang Xin-Fan Huang

作者单位: State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, Peoples Re State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093,Peoples Rep

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 944-946

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）