DC and Analog/RF Comparisons of Si-and Ge-Nanowire Schottky Barrier Transistors

摘要：

The DC and analog/RF performance of p-channel Schottky barrier Si and Ge nanowire transistors are simulated and some impact factors are studied. The results suggest that lOOmeV and 50meV are the most optimized Schottky barrier height for intrinsic gain and cutoff frequency respectively. Thinner nanowires enhance the drivability of silicon devices while impair that of germanium devices. With gate length scaled down, the intrinsic gain degrades, but cutoff frequency and intrinsic delay benefit from smaller capacitances.

作者: Jing Pu Lei Sun Ru-Qi Han

作者单位: Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 947-949

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）