Fabrication of Germanium-on-Insulator by Low temperature Direct Wafer Bonding

摘要：

A Germanium-on-Insulator (GeOI) wafer was fabricated using low temperature direct wafer bonding method. A hydrogen implanted Ge donor wafer was bonded to a thermally oxided Si handle wafer with in-situ oxygen radical activation before bonding in a vacuum chamber. Ex-situ anneals were use to enhance the bond strength or exfoliate the implanted Ge wafer. The insight into the exfoliation mechanism of the hydrogen implanted Ge wafer was observed by the surface roughness and x-ray diffraction pattern (XRD) measurements, combined with the high resolution transmission electron microscopy (HRTEM). The Ge surface after radical activation was analyzed by angle-resolved x-ray photoelectron spectroscopy (ARXPS). Scanning electron microscopy (SEM) was used to characterize the exfoliated Ge surface on handle SiO2 film.

作者: Ran Yu Ki Yeol Byun Isabelle Ferain Damien Angot Robin Morrison Cindy Colinge

作者单位: Tyndall National Institute, University College Cork, Lee Makings, Prospect Row, Cork, Ireland Grenoble INP Phelma, Minatec, 3 Parvis Louis Neel, 38016 Grenoble Cedex 1, France Department of Chemistry, University College Cork, Cork, Ireland Tyndall National Institute, University College Cork, Lee Makings, Prospect Row, Cork,Ireland

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 953-955

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）