Empirical Process Model for Arsenic Diffusion in Si1-xGex alloys

摘要：

The thermal diffusion behavior of ion-implanted Arsenic (As) in SiGe alloy has been investigated and modeled. This paper introduces an empirical model consisting of physics-based and process parameters for evaluating the effective diffusivity of Arsenic through SiGe accurately. The process parameters that were found to dominate the enhancement in arsenic diffusion were the Germanium content, diffusion temperature and the anneal time. The model was validated for the germanium content of up to 45％ with the reported data and the existing simulation models in Silvaco. The model incorporates all the effects associated with the change in the process parameters which affect the diffusivity of As in relaxed-SiGe.

作者: Abhishek A. Sharma Sanjay S. Mane

作者单位: Department of Electronics, Sardar Patel Institute of Technology, Mumbai 400058, India 2Department of Electronic & Electrical Communication, Indian Institute of Technology, Kharagpur, Ind

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 956-959

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）