Investigating the Effect of Non-stationary Transports in UTB MOSFETs with Elevated and Recessed Source/Drain by Using Full Band Monte Carlo Simulation Method

摘要：

This paper presents on-state characteristics of two types of UTB FD MOSFETs simulated by Monte Carlo method. The two devices under investigation have elevated and recessed source/drain respectively. The comparison of non-stationary transports effect is made between the two devices. Different nonstationary transports effect in the two devices is the cause of different on state characteristics. Transit time and intrinsic capacitance of these devices, which can also affected by non-stationary transports effect, are further presented.

作者: Mingda Zhu Si Chen Wei Zhang Xiaoyan Liu Gang Du

作者单位: Institute of Microelectronics, Peking University, Beijing 100871, China School of Mathematical Sciences, LMAM and CAPT, Peking University, Beijing 100871, China Institute of Microelectronics, Peking University, Beijing 100871,China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 960-962

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）