Chemical Vapor Deposition of Ga Dopants for Fabricating Ultrashallow p-n Junctions at 400C

摘要：

Chemical Vapor Deposition (CVD) of Ga on Si is performed in a commercial Si/SiGe epitaxial reactor at temperatures from 400 - 650 ℃ and conditions for which the Ga deposits selectivity on Si and the reactivity of the Ga with Si is so low that a thinfilm deposition is achieved. Contact windows to c-Si are covered with a thin layer of Ga and contacted by sputtering Al/Si(l％). On the basis of an extensive electrical I-V characterization, it is concluded that the Ga gives a substantial doping of the Si at a temperature of 400℃ and the resulting p-n junctions are near-ideal.

作者: Amir Sammak Lin Qi Wiebe B. de Boer Lis K. Nanver

作者单位: DIMES, Delft University of Technology, Feldmannweg 17, 2628 CT, Delft, The Netherlands

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 969-971

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）