Investigation of Electrical Characteristics of NdAlO3/SiO2 Stack Gate

摘要：

Degradation of electrical characteristics of NdAKVSiO2 stack gate under the constant voltage stress (CVS) is presented. It is found that the electron trapping, positive charges and oxide trap generation acts together, which causes the degradation of NdAlO3/SiO2 stack gate. The transport mechanisms of the gate leakage current in NdAlO3/SiO2 stack gate are also investigated. Frenkel-Poole emission and Schottky emission are the main transport mechanisms of the gate leakage current for the fresh sample, while F-N tunneling and Schottky emission are responsible for the gate leakage current after stress.

作者: Hong-xia Liu Qian-wei Kuang Zhi-lin Wang Bo Gao Shu-long Wang Yue Hao

作者单位: Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices, School of Microelectronics, Xidian University, Xian 710071, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 982-985

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）