Role of Oxygen in Hf-based High-k Gate Stacks on Vfb Shifts

摘要：

We have investigated the role of oxygen in Hf-based high-k gate stacks on Vfb shift. It is clearly shown that the Vfb of the HfSiOx-based high-k materials of the weak ionic oxide was almost constant irrespective of the oxidation annealing temperature. On the other hand, the HfO2-based high-k materials of the strong ionic oxide caused the positive Vfb shifts by introducing additional oxygen into high-k films. These suggest that the control of strength of ionic bond and oxygen content due to the oxygen transfer at hetero interface of ionic high-k/covalent SiO2 is a key if it assumes that the Vfb shift occurs dominantly at high-k/SiO2 interface.

作者: Toshihide Nabatame Akihiko Ohi Toyohiro Chikyow

作者单位: MANA Foundry and Advanced Electronic Materials Center, National Institute for Materials Science, 1-1 MANA Foundry and Advanced Electronic Materials Center, National Institute for Materials Science, 1-1

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 986-989

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）