Study on Chemical Bonding States at high-K/Si and high-K/Ge Interfaces by XPS
The paper reviews the non-destructive depth profiling of the composition and the chemical structure of high-κ/Si and high-κ/Ge using angle-resolved photoelectron spectroscopy. We have investigated the influence of the post deposition annealing on compositional depth profiles and chemical structures of high-K/semiconductor and the influence of Si-cap layer on chemical structures of HftVSi-cap/strained Ge/SiGe/Si interfaces by angle-resolved X-ray photoelectron spectroscopy. Analyses of Si 2s spectra show that the silicate was formed at high-K layer/Si interface during the deposition and that the reactivity between ScOx or CeOx and Si substrate is lower than that between LaOx and Si substrate. Analyses of Ge 2p, Si Is and Hf 3d spectra show that the strained-Ge layer was oxidized during the deposition of HfO2 in the case of 1 nm Si cap layer and that strained-Ge layer was not oxidized in the case of 3nm and 5nm Si cap layer. A critical Si thickness also extracted.
Hiroshi Nohira
Department of Electrical & Electronic Engineering, Tokyo City University, Setagaya-ku, Tokyo 158-8557, Japan
国际会议
上海
英文
990-993
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）