Scaling of EOT Beyond 0.5nm

摘要：

In this paper, we report our approaches in realizing EOT of 0.5nm and below with rare earth La2O3 high-k gate dielectric. An EOT of 0.43 nm was obtained from a TiN/W/La2O3(3nm)/n-Si capacitor by optimizing the thickness W layer. Our results show that a proper gate electrode is one of the most important factors for realizing EOT below 0.5nm.

作者: P. Ahmet H. Iwai D. Kitayama T. Kaneda T. Suzuki T. Koyanagi M. Kouda M. Mamatrishat T. Kawanago K. Kakushima

作者单位: Frontier Research Center,Yokohama, 226-8502, Japan Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology, Yokohama

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 994-996

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）