Preparation and characterization of low-dielectric-constant F-doped SiOCN films by PECVD
F-doped SiOCN films with low dielectric constant have been prepared using SiH_4, C2F6 and N2O as reactants by PECVD, and characterized by X-ray photoelectron spectroscopy (XPS), capacitance -voltage (C-V) and current-voltage (I-V) measurements, and nanoindenter. With an increment of the flow rate of C2F6, the concentrations of fluorine and carbon incorporated in the films increase, and the concentration of nitrogen decreases. This leads to a decrease in the dielectric constant of the film. When the flow rate of C2F6 is 750 sccm, the percentages of C and F elements amount to 5.2％ and 9.9％, respectively. Meanwhile, the resulting dielectric constant is reduced to 2.6, and the leakage current density is lower than 3×10-8 A/cm2 at lMV/cm. The hardness and Youngs modulus of the films are higher than 3 GPa and 84 GPa, respectively. It is thus believed that the introduction of carbon and fluorine can lower the dielectric constant of the films, and the presence of N can improve the mechanical properties of film.
Ke-Jia Qian Qing-Qing Sun Shi-Jin Ding Wei Zhang
State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai
国际会议
上海
英文
1003-1005
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）