Thermal stability of ultrathin RuC film as Cu diffusion barrier

摘要：

The properties of ultrathin RuC film and RuC/TaN stack as the Cu diffusion barrier on Si substrate were studied. The results show that the thermal stability of the Cu/RuC/TaN/Si structure is better than that of the Cu/Ru/TaN/Si structure. A flush TaN layer can improve the thermal stability of RuC film and make it a more robust diffusion barrier for Cu metallization.

作者: Shao-Feng Ding Qi Xie Christophe Detavernier Xin-Ping Qu

作者单位: State Key lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, Department of Solid State Science, Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1009-1011

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）