Design Consideration of Ion Implantation in Dopant Segregation Technique at NiSi/Si Interface

摘要：

The impacts of drive-in annealing and ion implantation process have been experimentally analyzed for the dopant segregation method by silicide as diffusion source, which provides the design guidelines for the application of dopant segregation technique. The results illustrate that the silicide as diffusion source technique is more sensitive to the ion implantation process. By optimizing the post-implantation energy, Schottky diodes of NiSi/n-Si with large Ion/Ioff ratio up to 109 have been fabricated. The extracted electron Schottky barrier height increases to 0.92eV, which means a relative low hole Schottky barrier height of about 0.2eV, which is suitable for Schottky barrier source/drain PMOS fabrication.

作者: Yue Guo Xia An Ru Huang Xing Zhang

作者单位: Institute of Microelectronics, Peking University. Beijing 100871, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1012-1014

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）