TEM/EELS analysis of ultra low-k inter-metal dielectric
As the scaling of transistors proceeds towards the deep sub-micron level, there is a need of replacement of inter-metal dielectric (IMD) from SiO2 (k=4.2) to a material with dielectric constant k < 3. In this study, we choose porous SiCOH with dielectric constant k=2.4 for the use as IMD layer. The quantitative analysis of the elements present in SiCOH has been performed by electron energy-loss spectroscopy (EELS) study. The short-range order in porous SiCOH has been investigated by the Selected Area Electron Diffraction (SAED). The local shortrange ordering examined by SAED gave a clear idea about the nearest-neighbour distance between atoms. The nearest-neighbour distance for the case of porous SiCOH is around 1.6 A and the ordering extends upto nearly 5 A. The average density calculated by SAED is about 2.0 g/cm3.
Pradeep K. Singh S. Zimmerman S. Schulze S. Schulz M. Hietschold
Chemnitz University of Technology, Institute of Physics, Chemnitz, Germany Fraunhofer ENAS, Department Back-End of Line, Chemnitz, Germany
国际会议
上海
英文
1015-1017
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）