Schottky Barrier Tuning at NiSi/Si Interface using Pre-silicide Aluminum and Sulfur Co-Implant

摘要：

In this paper, we examine the physical properties of NiSi/p-Si implanted with various combinations of aluminum (Al) and sulfur (S) doses for Schottky barrier tuning. Techniques used included HRTEM, TOFSIMS, HAADF STEM, and EDX. We also measured the integral interfacial dose (I1D) of Al and S, i.e. amount of Al and S found with 2.5 run of the interface, and correlated it to the Schottky barrier height (SBH). For the split with the same Al and S implant dose, the SBH tuning effect of Al overwhelms that of S and the extracted SBH is 0.137 eV.

作者: Yi Tong Shao-Ming Koh Qian Zhou An Yan Du Yee-Chia Yeo

作者单位: Department of Electrical & Computer Engineering, National University of Singapore (NUS), Singapore 1 Globalfoundries Singapore Pte Ltd, 60 Woodlands Industrial Park D Street 2, Singapore 738406

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1021-1023

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）