Characterization of Ultra-low k Porous Organosilica Thin Films
Porous organosilica thin films using 1,2-bis (triethoxysily)ethane, triethoxymethylsilane and a poly (ethylene oxide)-poly(propylene oxide)-poly (ethylene oxide) triblock copolymer template have been prepared by spin-on technique. The films were characterized by cross-sectional scanning electron microscopy, x-ray diffraction and Fourier-transform infrared spectroscopy. After thermal treatment at 350 ℃ in N2 for two hours, the films show well ordered porous structure as well as uniform and crack-free surface. The dielectric constant (k) as low as 2.0 was obtained at 100k Hz, and kept good thermal stability up to 500 ℃. Meanwhile, the resulting lowk porous films also exhibit low leakage current densities, e.g., 3.0×10-8 A/cm2 at 1 MV/cm, and good mechanical properties with elastic modulus of 4.7 GPa and hardness of 0.56 GPa in the case of 500 ℃ annealing.
Shuang Fu Ke-Jia Qian Shi-Jin Ding Wei Zhang Zhong-yong Fan
Department of Material Science, Fudan University, Shanghai 200433, China State Key Laboratory of ASI State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai Department of Material Science, Fudan University, Shanghai 200433, China
国际会议
上海
英文
1033-1035
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）