Electrical and Physical Characteristics of the High-K Tb2O3 (Terbium) Dielectric Deposited on the Polycrystalline Silicon

摘要：

Some high-k gate dielectrics such as Al2O3, HfO2,

作者: Chyuan-Haur Kao Hsian Chen Kung-Shao Chen Pei-Lun Lai Shih-Nan Cheng Chien-Jung Liao Hsin-Yuan Wang Chih-Hung Hsieh Chia-Han Lin

作者单位: Department of Electronic Engineering, Chang Gung University, 259 Wen Hsu lstRd., Kwei-Shan, Tao Yuan Department of Applied Materials and Optoelectronic Engineering, Chi Nan University

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1039-1041

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）