Study of the Sputtered Mo/TaN and Mo-Ta Thin Film as Diffusion Barrier for Copper Metallization

摘要：

In this work, the properties of sputtered Mo/TaN bilayers and Mo-Ta single layer as diffusion barriers were investigated for Cu metallization. The experimental results show that the Mo(5nm)/TaN(5nm) stack can withstand annealing up to 600 ℃ for 30min and the Mo-Ta(5nm) alloy barrier can effectively prevent Cu diffusion after 500 ℃ annealing.

作者: Fei Chen Shao-Feng Ding Xiao-Meng Zhang Xin-Ping Qu

作者单位: Department of Microelectronics, Fudan University, Shanghai 200433, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1042-1044

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）