Investigation of Co/TaN bilayer as Cu diffusion barrier

摘要：

The diffusion barrier properties of Co/TaN bilayer as Cu adhesion layer/diffusion barrier on the Si and low k (k=2.5) substrates were investigated. The barrier was prepared by using ion-beam sputtering technique. The barrier property was investigated by sheet resistance, X-ray diffraction (XRD), and Auger electron spectroscopy (AES) and electrical measurements. No obvious Cu diffusion and agglomeration was observed after annealing at 500℃ for 30 min. Results show that Co/TaN has a good potential as cost effective adhesion/diffusion stack in copper metallization.

作者: Hai-Sheng Lu Shao-Fcng Ding Guo-Ping Ru Yu-Long Jiang Xin-Ping Qu

作者单位: State key lab of ASIC and system, Department of microelectronics, Fudan University, Shanghai 200433, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1045-1047

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）