Future High Density Memory with Vertical Structured Device Technology

摘要：

For the past thirty years, the downscaling has been the guiding principle in the field of High-density semiconductor memories. However, recently, the limit of planar bulk MOSFETs is becoming apparent. Therefore, in order to extend the scalability of memory technology to the nano-scale generation, a new device structure is necessary. From the viewpoint, I will discuss future High density Memory with Vertical structured device technology.

作者: Tetsuo Endoh

作者单位: Center for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai, Japan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1051-1054

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）