Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM)

摘要：

Conventional memories such as SRAM, DRAM, and FLASH have set a very high cost/performance standard. Yet, recent advances in new materials, device technologies and circuits have made many emerging memories attractive candidates for a new generation of memories. This paper gives an overview of our recent research work on phase change memory (PCM) and metal oxide resistive switching memory (RRAM).

作者: H.-S. Philip Wong Sang Bum Kim Byoungil Lee Marissa A. Caldwell Jiale Liang Yi Wu Rakesh Gnana David Jeyasingh Shimeng Yu

作者单位: Dept. of Electrical Engineering and Center for Integrated Systems, Stanford University, Stanford, CA Dept. of Chemistry and Center for Integrated Systems, Stanford University, Stanford, CA 94305, USA

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1055-1060

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）